Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
Identifieur interne : 000736 ( Main/Exploration ); précédent : 000735; suivant : 000737Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
Auteurs : RBID : pubmed:23619012English descriptors
- KwdEn :
- Arsenicals (chemistry), Arsenicals (radiation effects), Electric Conductivity, Gallium (chemistry), Gallium (radiation effects), Indium (chemistry), Indium (radiation effects), Materials Testing, Nanowires (chemistry), Nanowires (radiation effects), Nanowires (ultrastructure), Particle Size, Phosphines (chemistry), Phosphines (radiation effects), Radiation Dosage, Semiconductors, Terahertz Radiation, Terahertz Spectroscopy (methods).
- MESH :
- chemical , chemistry : Arsenicals, Gallium, Indium, Phosphines.
- chemical , radiation effects : Arsenicals, Gallium, Indium, Phosphines.
- chemistry : Nanowires.
- methods : Terahertz Spectroscopy.
- radiation effects : Nanowires.
- ultrastructure : Nanowires.
- Electric Conductivity, Materials Testing, Particle Size, Radiation Dosage, Semiconductors, Terahertz Radiation.
Abstract
We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.
DOI: 10.1088/0957-4484/24/21/214006
PubMed: 23619012
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.</title><author><name sortKey="Joyce, Hannah J" uniqKey="Joyce H">Hannah J Joyce</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK. h.joyce1@physics.ox.ac.uk</nlm:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU</wicri:regionArea></affiliation></author><author><name sortKey="Docherty, Callum J" uniqKey="Docherty C">Callum J Docherty</name></author><author><name sortKey="Gao, Qiang" uniqKey="Gao Q">Qiang Gao</name></author><author><name sortKey="Tan, H Hoe" uniqKey="Tan H">H Hoe Tan</name></author><author><name sortKey="Jagadish, Chennupati" uniqKey="Jagadish C">Chennupati Jagadish</name></author><author><name sortKey="Lloyd Hughes, James" uniqKey="Lloyd Hughes J">James Lloyd-Hughes</name></author><author><name sortKey="Herz, Laura M" uniqKey="Herz L">Laura M Herz</name></author><author><name sortKey="Johnston, Michael B" uniqKey="Johnston M">Michael B Johnston</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1088/0957-4484/24/21/214006</idno><idno type="RBID">pubmed:23619012</idno><idno type="pmid">23619012</idno><idno type="wicri:Area/Main/Corpus">000654</idno><idno type="wicri:Area/Main/Curation">000654</idno><idno type="wicri:Area/Main/Exploration">000736</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term><term>Arsenicals (radiation effects)</term><term>Electric Conductivity</term><term>Gallium (chemistry)</term><term>Gallium (radiation effects)</term><term>Indium (chemistry)</term><term>Indium (radiation effects)</term><term>Materials Testing</term><term>Nanowires (chemistry)</term><term>Nanowires (radiation effects)</term><term>Nanowires (ultrastructure)</term><term>Particle Size</term><term>Phosphines (chemistry)</term><term>Phosphines (radiation effects)</term><term>Radiation Dosage</term><term>Semiconductors</term><term>Terahertz Radiation</term><term>Terahertz Spectroscopy (methods)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term><term>Gallium</term><term>Indium</term><term>Phosphines</term></keywords><keywords scheme="MESH" type="chemical" qualifier="radiation effects" xml:lang="en"><term>Arsenicals</term><term>Gallium</term><term>Indium</term><term>Phosphines</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Terahertz Spectroscopy</term></keywords><keywords scheme="MESH" qualifier="radiation effects" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electric Conductivity</term><term>Materials Testing</term><term>Particle Size</term><term>Radiation Dosage</term><term>Semiconductors</term><term>Terahertz Radiation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23619012</PMID><DateCreated><Year>2013</Year><Month>04</Month><Day>26</Day></DateCreated><DateCompleted><Year>2013</Year><Month>10</Month><Day>29</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>21</Issue><PubDate><Year>2013</Year><Month>May</Month><Day>31</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.</ArticleTitle><Pagination><MedlinePgn>214006</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/24/21/214006</ELocationID><Abstract><AbstractText>We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Joyce</LastName><ForeName>Hannah J</ForeName><Initials>HJ</Initials><Affiliation>Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK. h.joyce1@physics.ox.ac.uk</Affiliation></Author><Author ValidYN="Y"><LastName>Docherty</LastName><ForeName>Callum J</ForeName><Initials>CJ</Initials></Author><Author ValidYN="Y"><LastName>Gao</LastName><ForeName>Qiang</ForeName><Initials>Q</Initials></Author><Author ValidYN="Y"><LastName>Tan</LastName><ForeName>H Hoe</ForeName><Initials>HH</Initials></Author><Author ValidYN="Y"><LastName>Jagadish</LastName><ForeName>Chennupati</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Lloyd-Hughes</LastName><ForeName>James</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Herz</LastName><ForeName>Laura M</ForeName><Initials>LM</Initials></Author><Author ValidYN="Y"><LastName>Johnston</LastName><ForeName>Michael B</ForeName><Initials>MB</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Comparative Study</PublicationType><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>04</Month><Day>25</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Phosphines</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-00-0</RegistryNumber><NameOfSubstance>gallium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>22398-80-7</RegistryNumber><NameOfSubstance>indium phosphide</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electric Conductivity</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanowires</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="Y">radiation effects</QualifierName><QualifierName MajorTopicYN="N">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Phosphines</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">radiation effects</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Radiation Dosage</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Terahertz Radiation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Terahertz Spectroscopy</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>4</Month><Day>25</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>4</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>4</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>10</Month><Day>30</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/24/21/214006</ArticleId><ArticleId IdType="pubmed">23619012</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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